| 摘要 |
PURPOSE:To permit an intermediate layer to be rapidly hardened at low temp. by using a combination of organopolysilsesquioxane and a specified cross-linking agent as the intermediate layer in forming a resist pattern by using 3-layer resist films. CONSTITUTION:The intermediate layer of the 3-layer resist films contains a mixture of organopolysilsesquioxane represented by formula I and polydialkoxysiloxane represented by formula II. In formulae I and II, R1 and R2 are each optionally substd. lower alkyl or optionally substd. aryl, and each may be same or different. Organopolysesquioxane is preferably examplified by polymethylsilsesquioxane, and polydialkoxysiloxane is, preferably, embodied by polydiethoxysiloxane, and the cross-linking agent is, preferably, used in an amt. of 5-20wt% of organopolysesquioxane. |
