发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve fluidity of solder, to improve manufacturing yield of a chip carrier and to shorten a manufacturing time by partly continuing a metallized layer provided on a lower surface of a leg of a cap to a metallized layer provided at a position opposed to a back surface of a chip on a lower surface of the cap. CONSTITUTION:A chip carrier 1 is hermetically sealed at a semiconductor chip 5 with a cap 6 through a solder bump 4 on an electrode 3 of a main surface of a package board 2, and a leg of the cap 6 is soldered to a peripheral edge of the main surface of the board 2 by sealing solder 7. A first metallized layer 8a provided on the lower surface of the leg of the cap 6 is connected to a second metallized layer 8b provided at a position opposed to the back surface of the chip 5 on the lower surface of the cap 6 through a third metallized layer 8c. Thus, part of melted heat transfer solder 9 rapidly flows to a gap between the board 2 and the leg of the cap 6.
申请公布号 JPH04286145(A) 申请公布日期 1992.10.12
申请号 JP19910049808 申请日期 1991.03.14
申请人 HITACHI LTD 发明人 SATO TOSHIHIKO;HAYASHIDA TETSUYA
分类号 H01L21/52;H01L21/60;H01L23/12;H01L23/15 主分类号 H01L21/52
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