METHOD OF FORMING POLYCRYSTALLINE SILICON FILM,申请号JP19910052991-传众专利搜索

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发明名称	METHOD OF FORMING POLYCRYSTALLINE SILICON FILM
摘要
申请公布号	JPH04290219(A)	申请公布日期	1992.10.14
申请号	JP19910052991	申请日期	1991.03.19
申请人	NEC CORP	发明人	OGAWA KICHIJI
分类号	H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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