| 摘要 |
PURPOSE:To prevent the generation of a crack, which is generated at the time of the integration of a ceramic thin film. CONSTITUTION:A ceramic film, such as a paraelectric PZT film 5 or the like, is deposited in a vacuum on a silicon substrate 1 and thereafter, after the ceramic film is subjected to fine processing, an annealing treatment is performed and ferroelectric PZT films 7 are formed. Accordingly, the generation of a crack can be suppressed without damaging the insulation properties and dielectric characteristics of the ceramic film and the yield of a ceramic thin film element is improved. |
