发明名称 |
REFERENZSPANNUNGSERZEUGUNGSSCHALTKREIS |
摘要 |
A voltage reference, e.g. of bandgap type, for a dense memory includes a frequency compensating capacitor 33 or a low-pass filter 36 to reduce output transients caused by substrate noise. An electrostatic screen may be diffused into the substrate surface to shield high-impedance circuit nodes from the noise, which may be caused by a substrate bias generator. The transient reduction methods allow a lower current consumption. The resistors 26, 27, 29, 31, 34 may be polysilicon. <IMAGE>
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申请公布号 |
DE4139163(A1) |
申请公布日期 |
1992.12.24 |
申请号 |
DE19914139163 |
申请日期 |
1991.11.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD., SUWON, KR |
发明人 |
LEE, YEONG-TAEK, SEOUL/SOUL, KR |
分类号 |
H01L27/04;G05F3/30;G11C5/14;H01L21/822;H01L27/02 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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