发明名称 REFERENZSPANNUNGSERZEUGUNGSSCHALTKREIS
摘要 A voltage reference, e.g. of bandgap type, for a dense memory includes a frequency compensating capacitor 33 or a low-pass filter 36 to reduce output transients caused by substrate noise. An electrostatic screen may be diffused into the substrate surface to shield high-impedance circuit nodes from the noise, which may be caused by a substrate bias generator. The transient reduction methods allow a lower current consumption. The resistors 26, 27, 29, 31, 34 may be polysilicon. <IMAGE>
申请公布号 DE4139163(A1) 申请公布日期 1992.12.24
申请号 DE19914139163 申请日期 1991.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD., SUWON, KR 发明人 LEE, YEONG-TAEK, SEOUL/SOUL, KR
分类号 H01L27/04;G05F3/30;G11C5/14;H01L21/822;H01L27/02 主分类号 H01L27/04
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