| 摘要 |
PURPOSE:To prevent the deterioration of characteristics of a photovoltaic element by distributing indium atoms in a glass support in such manner that the indium atoms decrease inward from the surface with a transparent electrode formed thereon. CONSTITUTION:A glass support 302 is heated while a deposit chamber 301 is exhausted and, at the point of time when about 1X10<-5>Torr is read on a vacuum gauge 308, O2 gas is allowed to flow into the deposit chamber 301. In this case, the flow rate of O2 gas is adjusted to 10 sccm and the pressure in the deposit chamber 301, to 0.3 Torr. After that, a vapor deposition source 304 is heated and then a shutter 307 is opened so that the formation of indium oxide on the glass support 302 is started and the indium oxide of 10nm layer thickness is formed. Subsequently, Ar gas is caused to flow into the deposit chamber 301. At that time, the flow rate of Ar gas is adjusted to 10 sccm and the pressure in the deposit chamber 301, to 1Torr. Then, the glass support 302 is heated by a heater 303 so that a heat treatment is conducted for 2 hours. After that, a transparent electrode is made on the glass support 302. |
