High CF4 flow-reactive ion etch for aluminum patterning

摘要

An anisotropic reactive ion etching of an aluminum metal film of a semiconductor device. The device is placed in a reactive ion etcher using a CF4, Cl2 and BCl3 gas mixture to anisotropically etch the aluminum metal film layer wherein the gas mixture has a ratio of CF4:Cl2 such that the aluminum etch rate increases as the amount of CF4 relative to Cl2 increases.