Method of manufacturing substrate having semiconductor on insulator.

摘要

A polysilicon layer (8) is formed on a surface of a silicon substrate (1). Oxygen ions (2) are implanted into the silicon substrate through the polysilicon layer, and an SiO2 film (3) is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer (4) between the polysilicon layer and the SiO2 film, thereby providing an SOI layer (5) with improved crystal quality. <IMAGE>