发明名称 |
Method of manufacturing an heteroepitaxial semiconductor structure |
摘要 |
Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micrometers. In islands of this size stress in the plane of the epitaxially grown layers due to mismatch of the coefficients of thermal expansion of the substrate and epitaxially grown materials is insignificant.
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申请公布号 |
US5272105(A) |
申请公布日期 |
1993.12.21 |
申请号 |
US19910816413 |
申请日期 |
1991.12.31 |
申请人 |
GTE LABORATORIES INCORPORATED |
发明人 |
YACOBI, BEN G.;ZEMON, STANLEY;JAGANNATH, CHIRRAVURI |
分类号 |
H01L21/20;H01L21/306;H01L31/103;H01L31/18;(IPC1-7):H01L21/20;H01L31/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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