| 摘要 |
The isolation method comprises the steps of; forming SRO (stress relief oxide) on a silicone substrate and a nitride layer, forming an active pattern and etching said nitride layer and SRO, a light oxidizing side wall of said etched silicone substrate, N2 ion injecting and annealing to form oxynitride of SixNyOz, dipping in HF and field oxidizing, thereby preventing stress generation and bird's beak.
|
