| 摘要 |
A process for dry etching a conductive polymer film using a microwave source is provided to obtain a precise pattern without using an expensive system, and to facilitate alignment with the underlying substrate. A process for dry etching a conductive polymer film using a microwave source comprises the steps of: forming a polyethylene dioxythiophene film on the surface of any one substrate of a glass substrate, plastic substrate and wafer, via vapor phase polymerization; and spin coating a photosensitive resin on the polyethylene dioxythiophene film, carrying out soft baking, aligning a glass mask on the photosensitive resin film on the polyethylene dioxythiophene film, exposing the photosensitive film to a UV lamp, dipping the substrate into a developing agent, washing the substrate with H2O after the photosensitive resin film is developed, carrying out post baking of the substrate, cooling the substrate, introducing the substrate into a chamber provided with a microwave source, depressurizing the chamber until the pressure reaches 4-6 Pa, introducing Ar and O2 into the chamber in an amount of 50 sccm and 120 sccm, respectively, generating plasma through the 200-500W microwave source while maintaining the chamber at a pressure of 40-60 Pa to remove the exposed polyethylene dioxythiophene film, introducing nitrogen into the chamber until the pressure reaches ambient pressure, and washing the photosensitive resin film with acetone and methanol to form a patterned polyethylene dioxythiophene film on the substrate. |
