| 摘要 |
A transmitting device includes (a) an amplifier mounted on the top face or the internal layer of a substrate, (b) a semiconductor integrated circuit mounted on the bottom face of the substrate and connected to the amplifier, and (c) a spacer substrate disposed on the bottom face of the substrate. The spacer substrate is disposed at least under the amplifier. This structure allows the heat generated from the amplifier to be efficiently dissipated through the spacer substrate, thus inhibiting deterioration of the characteristics of the amplifier caused by the heat.
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