发明名称 |
NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND LSB READ METHOD |
摘要 |
A non-volatile memory device and system as well as a LSB read method are disclosed. The LSB read method includes reading LSB data from a memory cell during a main LSB read operation making reference to a flag cell threshold voltage, determining whether the LSB data contains an error, and if the LSB data contains an error re-reading the LSB data during a LSB recover-read operation without making reference to the flag cell threshold voltage.
|
申请公布号 |
US2008259686(A1) |
申请公布日期 |
2008.10.23 |
申请号 |
US20080103176 |
申请日期 |
2008.04.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG SANG-WON |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|