发明名称 PROTECTIVE COATING FOR PLANARIZATION
摘要 Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
申请公布号 US2008261349(A1) 申请公布日期 2008.10.23
申请号 US20080123021 申请日期 2008.05.19
申请人 MICRON TECHNOLOGY, INC. 发明人 ABATCHEV MIRZAFER;WELLS DAVID;ZHOU BAOSUO;SUBRAMANIAN KRUPAKAR M.
分类号 H05K3/00;H01L21/00 主分类号 H05K3/00
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