HIGH DENSITY NANODOT NONVOLATILE MEMORY

摘要

A nanodot nonvolatile memory element comprises a substrate having a source and a drain region formed therein, and an insulating layer formed on the substrate. The insulating layer contains a nanocrystalline floating gate of approximately three -to six nanometers in diameter formed at a distance of approximately two to five nanometers from the substrate, and a carbon nanotube control gate having a diameter of approximately six nanometers or less is formed at a distance of approximately 10-15 nanometers from the substrate.