SEMICONDUCTOR DEVICE STRUCTURE

摘要

Semiconductor device structures and methods of fabricating such semiconductor device structures for use in static random access memory (SRAM) devices. The semiconductor device structure comprises a dielectric region disposed between first and second semiconductor regions and a gate conductor structure extending between the first and second semiconductor regions. The gate conductor structure has a first sidewall overlying the first semiconductor region. The device structure further comprises an electrically connective bridge extending across the first semiconductor region. The electrically connective bridge has a portion that electrically connects a impurity-doped region in the first semiconductor region with the first sidewall of the gate conductor structure.