ACCUMULATION FIELD EFFECT MICROELECTRONIC DEVICE AND PROCESS FOR THE FORMATION THEREOF
摘要
<p>A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.</p>
申请公布号
WO2008128164(A1)
申请公布日期
2008.10.23
申请号
WO2008US60208
申请日期
2008.04.14
申请人
THE PENN STATE RESEARCH FOUNDATION;ASHOK, S.;FONASH, STEPHEN, J.;SHAN, YINGHUI