发明名称 PROCESS FOR MANUFACTURING PHASE-SEPARATED DIELECTRIC STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic device having a phase-separated dielectric structure. SOLUTION: The manufacturing method includes: deposition of a semiconductor layer; liquid phase deposition of a dielectric composition including a low-permittivity material, a high-permittivity material, and liquid without phase separation of low- and high-permittivity materials; and the generation of phase separation of the low-permittivity and high-permittivity materials. The low-permittivity material has a concentration higher than that of the high-permittivity material in a region of a dielectric structure closest to the semiconductor layer. The semiconductor layer is deposited before the dielectric composition is subjected to liquid deposition, or after phase separation is generated. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008258609(A) 申请公布日期 2008.10.23
申请号 JP20080077941 申请日期 2008.03.25
申请人 XEROX CORP 发明人 WU YILIANG;MAHABADI HADI K;ONG BENG S;SMITH PAUL F
分类号 H01L21/336;H01L21/283;H01L21/312;H01L29/786;H01L51/05;H01L51/30 主分类号 H01L21/336
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