| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing the formation of a wedge-shaped oxide film between a tunnel insulating film and a floating gate electrode. SOLUTION: The semiconductor device has a semiconductor substrate 10, the tunnel insulating film 20 formed on the semiconductor substrate and a floating gate electrode 30 comprising a lower-layer semiconductor film 31 formed on the tunnel insulating film, an upper-layer semiconductor film 33 containing an impurity element and a barrier insulating film 32 being formed between the lower-layer semiconductor film and the upper-layer semiconductor film and suppressing the diffusion of the impurity element contained in the upper-layer semiconductor film to the lower-layer semiconductor film. The semiconductor device further has an interelectrode insulating film 40 formed on the floating gate electrode and a control gate electrode 50 formed on the interelectrode insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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