| 摘要 |
PROBLEM TO BE SOLVED: To prevent or control the generation of particle caused by a drop of a temperature of vaporized gas. SOLUTION: The substrate treatment apparatus at least includes a treatment chamber 201 to accommodate a wafer 200, a heater 207 to heat the wafer 200, a gas supply source 250 to supply treatment gas into the treatment chamber 201, a gas exhaust pipe 231 or the like to exhaust an atmosphere in the treatment chamber 201 and a controller 280. The gas supply source 250 is at least provided with a gas supply pipe 232a to supply the vaporized gas obtained by vaporizing a liquid or solid-state raw material and a gas supply pipe 232b to supply gas different from the vaporized gas. The controller 280 controls, when the vaporized gas is supplied into the treatment chamber 201 from the gas supply pipe 232a, the gas supply source 250 to supply heated inert gas to the treatment chamber 201 from the gas supply pipe 232b. COPYRIGHT: (C)2009,JPO&INPIT |
