Semiconductor Device Manufactured Using an Oxygenated Passivation Process During High Density Plasma Deposition

摘要

In one aspect, the method comprises forming trenches in a semiconductor substrate and filling the trenches with a dielectric material. The process of filling the trenches includes depositing the dielectric material with a plasma gas mixture, etching the dielectric material with a chemical etch including nitrogen fluoride and using a passivation process to passivate the dielectric material after etching with a gas mixture that includes oxygen and hydrogen.