摘要 |
An electronic device (10) can have an insulating layer (14) lying between a first semiconductor layer (16) and a base layer (12). A second semiconductor layer (22), having a different composition and stress as compared to the first semiconductor layer, can overlie at least a portion of the first semiconductor layer. In one embodiment, a first electronic component (52 or 54) can include a first active region that includes a first portion of the first and the second semiconductor layers. A second electronic component (58 or 56) can include a second active region that can include a second portion of the first semiconductor layer. Different processes can be used to form the electronic device. In another embodiment, annealing a workpiece can be performed and the stress of at least one of the semiconductor layers can be changed. In a different embodiment, annealing the workpiece can be performed either before or after the formation of the second semiconductor layer. |
申请人 |
FREESCALE SEMICONDUCTOR INC.;SADAKA, MARIAM G.;KOLAGUNTA, VENKAT R.;TALYOR, WILLIAM J.;VARTANIAN, VICTOR H. |
发明人 |
SADAKA, MARIAM G.;KOLAGUNTA, VENKAT R.;TALYOR, WILLIAM J.;VARTANIAN, VICTOR H. |