RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD

摘要

Disclosed are: a resin for forming an upper antireflective film which can reduce a standing wave effect satisfactorily and has excellent solubility in an alkaline developer in lithography; a composition for forming the upper antireflective film; and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1000 to 100000 as measured by GPC method, and is soluble in an alkaline developer. (1) (2) wherein R¹ to R¹⁴ independently represent a hydrogen atom, -OH, -COOH or -SO₃H, provided that all of R¹ to R⁷ or R⁸ to R¹⁴ do not represent a hydrogen atom in a molecule.