| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a crystalline thin film which is obtained by crystallizing an amorphous thin film and/or a low-crystalline thin film in a short time while holding the temperature of the thin films at a low temperature and homogeneous, and which can be formed on a resin substrate, and to provide a method for producing the same. <P>SOLUTION: The method for producing the crystalline thin film is characterized by arranging an amorphous thin film and/or a low-crystalline thin film in a high frequency applying device in which a conductive electrode is provided in parallel to the surface of the thin film and quite close to the thin film, then generating plasma under such a condition that a high frequency electric field is concentrated to the thin film, and crystallizing the amorphous thin film and/or the low-crystalline thin film while maintaining temperature at 150°C or lower and/or setting the time required for crystallization to be ≤15 min. It is preferable to optimally control the pressure of a gas in the high frequency applying device so as to generate plasma so that the high frequency electric field is concentrated to the amorphous thin film or the like. <P>COPYRIGHT: (C)2009,JPO&INPIT |
