| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT of which the turn-on voltage is low and the breakdown voltage is high. SOLUTION: The IGBT is provided with a first conductive collector region; a second conductive drift region stacked on the collector region; a first conductive body region that is isolated from the collector region by the drift region; a second conductive emitter region that is isolated from the drift region by the body region; and a gate electrode that is opposite to a body region separating the emitter region and the drift region, with an insulation film in between. The drift region is provided with a first low-concentration region that is low in impurity concentration and is in contact with the body region; a high-concentration region that is high in impurity concentration, is in contact with the first low-concentration region and is isolated from the body region by the first low-concentration region and is spread as a layer in the direction of the plane of the semiconductor substrate; and a second low-concentration area that is low impurity concentration and is in contact with the high-concentration region, and isolates the high-concentration region from the collector region. COPYRIGHT: (C)2009,JPO&INPIT
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