| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit and a method of sense amplifier useful for embedding DRAM together with other logic or memory functions especially in an integrated circuit, in a sense amplifier for DRAM memories which brings about reduction of distortion in a control signal. SOLUTION: A sense enable circuit is provided for differential sensing latch in a sense amplifier, and each has transistors MNB and MNC which make a cascade connected pair receiving separate control signals SAE_1 and SAE_2. Individual control signals SAE_1 and SAE_2 are provided by control circuits and are accompanied by a delay overlap. Differential sensing can be performed when delay overlap exists between individual control signals SAE_1 and SAE_2. An array of DRAM memory cell is connected to a plurality of sense amplifiers. The DRAM memory included in the sense amplifier may be embedded in the integrated circuit with other circuits. A method to provide the control signal and a method to lay out the DRAM memory with the sense amplifier are provided. COPYRIGHT: (C)2009,JPO&INPIT
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