| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM memory cell evaluating method and program which can shorten its design time by evaluating the static noise margin in a shorter time. SOLUTION: First, coordinate transformation is made by turning the coordinates by 45°for the input output characteristic data of the first inverter of an SRAM memory cell to specify the first approximation curve function by fitting to the approximation curve. Then, coordinate transformation is made by turning the coordinates by 45°for the input output characteristic data of the second inverter of the SRAM memory cell to specify the second approximation curve function by fitting to the approximation curve. The third approximation curve function which is the function obtained by mirror reversing the above second approximation curve function about the Y-axis is specified. The static noise margin is specified from the extremal value of the difference curve function using the difference between the first approximation curve function and the third approximation curve function. COPYRIGHT: (C)2009,JPO&INPIT
|
