SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

Disclosed is a technique for stabilizing characteristics of an NdGaO<SUB>3</SUB> substrate which is used for epitaxial growth and growing a good-quality nitride compound semiconductor single crystal with good reproducibility. Specifically, an NdGaO<SUB>3</SUB> single crystal grown by a crystal pulling method is subjected to an annealing process in the atmosphere at a temperature not less than 1400°C but not more than 1500°C for a certain time (for example, for 10 hours), and this annealed NdGaO<SUB>3</SUB> substrate is used as a substrate for epitaxial growth.