| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method in which resolution attained by the double patterning can be maximally exhibited. <P>SOLUTION: After a lower layer film 102, an intermediate layer film 103, and a first resist film 104 are formed on a semiconductor substrate 101, a first exposure is performed, to form a first resist pattern 104a. Then, a first resist pattern 104a is transferred onto the intermediate layer film 103, to form a first intermediate layer pattern 103a, and a second resist film 107 is formed on the first intermediate layer pattern 103a. Next, a second exposure is performed, to form a second resist pattern 107a. Then, the second resist pattern 107a is transferred onto the intermediate layer film 103, to form a second intermediate layer pattern 103b. After removing the second resist film 107, the lower layer film 102 is etched by using the second intermediate layer pattern 103b as a mask, to form a lower layer pattern 102b. <P>COPYRIGHT: (C)2009,JPO&INPIT |
