| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device having a high breakdown voltage and low on resistance. SOLUTION: In power MOSFETs, the total amount of impurities in an n pillar layer 3 having a super junction structure and that of impurities in a p pillar layer 4 is set to be smaller than that at the center in the longitudinal direction at the edge of the side of a source electrode 9. COPYRIGHT: (C)2009,JPO&INPIT |
