| 摘要 |
PROBLEM TO BE SOLVED: To provide a short circuit protection circuit for preventing device destruction of a high breakdown voltage output terminal about a high breakdown voltage driver of a multichannel semiconductor integrated circuit. SOLUTION: The semiconductor integrated circuit is provided with a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a predriver circuit for driving the low-side transistor, and a connection point between the high-side transistor and the low-side transistor is defined as an output terminal. The level shift circuit has first and second N type MOS transistors whose gates are driven by the predriver circuit, wherein an anode is connected to drains of the first or second N type MOS transistor to which the gate of the high-side transistor is not connected, and a cathode is further provided with a diode connected to an output terminal. COPYRIGHT: (C)2009,JPO&INPIT
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