发明名称 SOLID-STATE IMAGING ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce a smear factor caused by electric charges generated by multiple reflection of intermingled light via an insulating layer and flowing into a transfer channel. SOLUTION: A charge transfer part 3 arranged horizontally H adjacently to light receiving parts 1 and extending vertically V extends between the light receiving parts 1 arranged horizontally H. There is provided a transfer electrode 7 comprising a silicon oxide film 7s and a polysilicon film 7p vertically V repeatedly on the charge transfer part 3. On the transfer electrode 7 there is disposed a shunt wiring 13 that becomes a light shielding film via an insulating layer 9. The shunt wiring 13 is connected with the transfer electrode 7 by a contact hole 12 on the charge transfer part 3. With this constitution, the thickness of the insulating layer between the shunt wiring 13 and the transfer electrode 7 (the polysilicon film 7p of the conductive film) is secured, enabling the thickness of the insulating layer 9 that covers the entire surface to be thinner by the thickness of the silicon oxide film 7s and hence reducing intermingled light to reduce a smear factor. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008258472(A) 申请公布日期 2008.10.23
申请号 JP20070100260 申请日期 2007.04.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMASHITA KAZUHIRO
分类号 H01L27/148;H01L27/14;H04N5/335;H04N5/341;H04N5/359;H04N5/369;H04N5/372 主分类号 H01L27/148
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