| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device equipped with a gold bump electrode for reducing the waste of material costs, and for reducing the number of processes. <P>SOLUTION: This method for manufacturing a semiconductor device including a process for forming a gold bump posterior to a process for forming a passivation film includes: a process for despositing a polyimide film having positive type photosensitivity; a first exposure process for carrying out exposure to form an opening at a position where the gold bump is formed to the deposited polyimide film; and a second exposure process for carrying out exposure to the predetermined section of the polyimde film after forming the gold bump at the formed opening. <P>COPYRIGHT: (C)2009,JPO&INPIT |
