| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material to be used for forming a film having high electroconductivity close to that of an ITO film at a high speed. <P>SOLUTION: The ZnO vapor deposition material to be used for forming a transparent electroconductive film is formed of a pellet which contains ZnO as a main component, La and one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of La is higher than that of the one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of La is in a range of 0.1 to 14.9 mass%, and the content proportion of the one or more elements selected from the group consisting of B, Al, Ga and Sc is in a range of 0.1 to 10 mass%. <P>COPYRIGHT: (C)2009,JPO&INPIT |
