发明名称 ZnO VAPOR DEPOSITION MATERIAL AND ZnO FILM FORMED THEREFROM
摘要 <P>PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material to be used for forming a film having high electroconductivity close to that of an ITO film at a high speed. <P>SOLUTION: The ZnO vapor deposition material to be used for forming a transparent electroconductive film is formed of a pellet which contains ZnO as a main component and both elements of Ce and Sc. The content proportion of Ce is higher than that of Sc. The content proportion of Ce is in a range of 0.1 to 14.9 mass%, and the content proportion of Sc is in a range of 0.1 to 10 mass%. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008255473(A) 申请公布日期 2008.10.23
申请号 JP20080048896 申请日期 2008.02.29
申请人 MITSUBISHI MATERIALS CORP 发明人 MAYUZUMI YOSHIYUKI
分类号 C23C14/24;C04B35/453;C23C14/08;C23C14/34;H01B5/14 主分类号 C23C14/24
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