发明名称 |
ZnO VAPOR DEPOSITION MATERIAL AND ZnO FILM FORMED THEREFROM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material to be used for forming a film having high electroconductivity close to that of an ITO film at a high speed. <P>SOLUTION: The ZnO vapor deposition material to be used for forming a transparent electroconductive film is formed of a pellet which contains ZnO as a main component and both elements of Ce and Sc. The content proportion of Ce is higher than that of Sc. The content proportion of Ce is in a range of 0.1 to 14.9 mass%, and the content proportion of Sc is in a range of 0.1 to 10 mass%. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2008255473(A) |
申请公布日期 |
2008.10.23 |
申请号 |
JP20080048896 |
申请日期 |
2008.02.29 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
MAYUZUMI YOSHIYUKI |
分类号 |
C23C14/24;C04B35/453;C23C14/08;C23C14/34;H01B5/14 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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