| 摘要 |
PROBLEM TO BE SOLVED: To enable reduction of a threshold voltage while avoiding reduction of electric characteristics in a semiconductor device using a high-k insulating film as a gate insulating film. SOLUTION: A method of manufacturing a semiconductor device includes a step of preparing a silicon substrate, a step of forming a gate insulating film made of hafnium-base oxide or hafnium-based oxinitride on the silicon substrate, a step of forming a gate electrode made of a metal selected from the group of Ru, Ir, Pt, Pd, Re, W, Mo, Ni, Co and TiN and containing as Al or rare earth element as an additive element, a step of forming a source/drain region in the silicon substrate at both sides of the gate electrode, and a heat treatment step of forming an oxide film containing the additive element between the gate insulating film and the gate metal by precipitating the additive element contained in the gate electrode. COPYRIGHT: (C)2009,JPO&INPIT
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