发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To attain both of a small chip size and high efficiency in a multimode interference (MMI) semiconductor laser. SOLUTION: In the semiconductor laser provided with a waveguide configured by connecting a first single mode waveguide, a multimode interference (MMI) waveguide and a second single mode waveguide in this order, the effective refractive index differenceΔn of the MMI waveguide is made larger than that of both the single mode waveguides. For instance, the mesa stripe etching depth of the single mode waveguides is made different from that of the MMI waveguide (Fig. 1(a)), and/or the refractive indexes of materials brought into contact with both side faces of the mesa strip are made different from each other (Fig. 1(b)). COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008258415(A) 申请公布日期 2008.10.23
申请号 JP20070099331 申请日期 2007.04.05
申请人 NEC ELECTRONICS CORP 发明人 IGARASHI TOSHIAKI
分类号 H01S5/22 主分类号 H01S5/22
代理机构 代理人
主权项
地址