| 摘要 |
PROBLEM TO BE SOLVED: To fabricate semiconductor wafer chips with good yield by aggregating cracks on a notch structure. SOLUTION: This method has a step of forming a plurality of semiconductor elements 16 on a semiconductor wafer made of a semi-insulative substrate 14 and sticking them on a first holding substrate 10 on the rear surface of the semi-insulative substrate 14; a step of forming notch grooves 18 on a portion to be separated on the upper surface of the semiconductor wafer; a step of sticking a second holding substrate 24 after forming a protective resist layer 20 on the upper surface of the semiconductor wafer; a step of peeling the first holding substrate 10 from the semiconductor wafer; a step of thinning the semi-insulative substrate 14 by polishing the rear surface thereof; a step of sticking a holding film layer 26 on the rear surface of the thinned semi-insulative substrate 14; a step of peeling the second holding substrate 24 and removing the protective resist layer 20; and a step of fabricating semiconductor wafer chips by elongating the holding film layer 26. COPYRIGHT: (C)2009,JPO&INPIT
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