| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensor which can restrain inflow of an overcoat layer to a microlens, and to provide its fabrication process. SOLUTION: The solid-state image sensor 1 comprises a semiconductor substrate 2, a light-receiving portion 4 formed in the P-well 3 of the semiconductor substrate 2, a charge transfer portion 5 formed in the P-well 3 of the semiconductor substrate 2, a microlens 14 formed of resin above the light-receiving portion 4, and an overcoat layer 15 formed of resin on the microlens 14 wherein the microlens 14 and the overcoat layer 15 are formed of the same kind of resin. COPYRIGHT: (C)2009,JPO&INPIT
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