NON-VOLATILE MEMORY DEVICE HAVING IMPROVED ERASE EFFICIENCY AND METHOD OF MANUFACTURING THE SAME

摘要

A non-volatile memory device having an improved erase efficiency and a method of manufacturing the same are provided. The method includes: forming a stack structure of a tunnel dielectric layer, a charge trapping layer, a charge blocking layer and a gate on a semiconductor substrate; and performing a post treatment of the gate using an oxygen or CF₄ plasma or ion implantation to increase a work function of an element forming the gate. Since the work function of the metal layer forming the gate can be further increased, an electron back tunneling can be suppressed during an erase operation.