Semiconductor Devices Including an Amorphous Region in an Interface Between a Device Isolation Layer and a Source/Drain Diffusion Layer

摘要

Semiconductor devices and methods for fabricating the same are disclosed in which an amorphous layer is formed in an interface between a device isolation layer and a source or drain region to stably thin a silicide layer formed in the interface. A leakage current of the silicide layer formed in the interface between the device isolation layer and the source/drain region is reduced.