SEMICONDUCTOR LIGHT EMITTING DEVICE CONFIGURED TO EMIT MULTIPLE WAVELENGTHS OF LIGHT

摘要

In accordance with embodiments of the invention, a Ill-nitride structure includes a plurality of posts of semiconductor material corresponding to openings in a mask layer (24). Each post includes a light emitting layer (28). Each light emitting layer is disposed between an n-type region (26) and a p-type region (30). A first light emitting layer (28) disposed in a first post is configured to emit light at a different wavelength than a second light emitting layer (28) disposed in a second post. In some embodiments, the wavelength emitted by each light emitting layer (28) is controlled by controlling the diameter of the posts, such that a device that emits white light without phosphor conversion may be formed.