发明名称 |
PHASE-CHANGEABLE MEMORY DEVICES |
摘要 |
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface portion and is in electrical contact with the contact region of the substrate. A phase-changeable material layer pattern is on the lower electrode, and an upper electrode is on the phase-changeable material layer pattern. The insulating interlayer may have a nitrided surface portion and the phase-changeable material layer may be at least partially on the nitrided surface portion of the insulating interlayer. Methods of forming phase-changeable memory devices are also disclosed.
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申请公布号 |
US2008258128(A1) |
申请公布日期 |
2008.10.23 |
申请号 |
US20080147996 |
申请日期 |
2008.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KUH BONG-JIN;HA YONG-HO;YI JI-HYE |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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