发明名称 |
ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE |
摘要 |
New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
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申请公布号 |
US2008261145(A1) |
申请公布日期 |
2008.10.23 |
申请号 |
US20070736429 |
申请日期 |
2007.04.17 |
申请人 |
ZHONG XING-FU;FLAIM TONY D;MALHOTRA JYOTI |
发明人 |
ZHONG XING-FU;FLAIM TONY D.;MALHOTRA JYOTI |
分类号 |
G03C1/043;G03C5/00 |
主分类号 |
G03C1/043 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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