SEMICONDUCTOR DEVICE COMPRISING A TRANSISTOR HAVING A COUNTER-DOPED CHANNEL REGION AND METHOD FOR FORMING THE SAME

摘要

A method for making a semiconductor device includes providing a first substrate region (11) and a second substrate region (13), wherein at least a part of the first substrate region (11) has a first conductivity type and at least a part of the second substrate region (13) has a second conductivity type different from the first conductivity type. The method further includes forming a dielectric layer (12) over at least a portion of the first substrate region (11) and at least a portion of the second substrate region (13). The method further includes forming a metal-containing gate layer (14) over at least a portion of the dielectric layer (12) overlying the first substrate region (11). The method further includes introducing dopants into at least a portion of the first substrate region (11) through the metal-containing gate layer (14).