发明名称 THICK FILM CONDUCTIVE COMPOSITION AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>The present invention is directed to a thick film conductive composition comprising: a) electrically conductive silver powder; b) ZnO powder; c) lead-free glass frits wherein based on total glass frits: Bi&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;3&lt;/SUB&gt;: &gt;5 mol%, B&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;3&lt;/SUB&gt;: &lt; 15 mol%, BaO: &lt; 5 mol%, SrO: &lt; 5 MOL%, AL&lt;SUB&gt;2&lt;/SUB&gt;O&lt;SUB&gt;3&lt;/SUB&gt;: &lt; 5 mol%; and d) organic medium, wherein (the content of ZnO / the content of the silver powder) x 100 is more than 2.5.</p>
申请公布号 WO2008127624(A1) 申请公布日期 2008.10.23
申请号 WO2008US04657 申请日期 2008.04.09
申请人 E. I. DU PONT DE NEMOURS AND COMPANY;KONNO, TAKUYA 发明人 KONNO, TAKUYA
分类号 H01L31/0224 主分类号 H01L31/0224
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