TRENCH METAL OXIDE SEMICONDUCTOR

摘要

A trench metal oxide semiconductor is provided to prevent edge leakage by implementing a remote contact in a polysilicon area of TMBS devices. A trench metal oxide semiconductor includes a TMBS(Trench MOS Barrier Schottky) device. The TMBS device includes a source metal layer and plural substrates(205) having plural first trenches(210-215) which include conductive materials. The TMBS device includes an active area. The source metal layer is electrically contacted with the substrates in the active area and insulated with the conductive materials disposed in the first trenches. The conductive materials disposed in the trenches are electrically coupled with a contact implemented at an outer of the active area of the TMBS device.