| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent collapse phenomenon between bit lines due to reduced width of the bit lines by implementing an oxide layer as barrier between bit lines. A semiconductor device includes a semiconductor substrate(300), plural gates(302), an interlayer dielectric(304), and bit lines and bit bar lines(314,320). The gates are formed on the semiconductor substrate. The interlayer dielectric is formed on the semiconductor substrate to cover the gates. The bit lines and bit bar lines having different height from one another are alternately disposed on the interlayer dielectric to contact with an area on the semiconductor substrate between the gates. The bit lines are positioned higher than the bit bar lines.
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