| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III-V nitride-based semiconductor substrate which has suppressed crystal defects and good surface characteristics and on which an epitaxial layer, wherein the surface level difference of the unevenness is suppressed to be small, can be formed; and to provide a method for manufacturing the same. <P>SOLUTION: The group III-V nitride-based semiconductor substrate is composed of a group III-V nitride-based semiconductor single crystal having the same crystal orientation. The level difference between an area grown on (0001)C plane and an area grown on a facet plane being a crystal surface other than the C-plane is controlled to be ≤0.3 μm by controlling the etching speed and the etching amount. <P>COPYRIGHT: (C)2009,JPO&INPIT |
