MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE WITH SMALL-ANGLE TOGGLE WRITE LINES, ARRAY THEREOF, AND SWITCHING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a toggle-mode M-RAM device with a reduced switching field and a low error rate during write operation. SOLUTION: A magnetoresistive random access memory device of the present invention comprises: a first write line extending along a first direction on a first plane; a second write line extending along a second direction non-orthogonal to the first direction, on a second plane parallel to the first plane; and a magnetoresistive memory element having a switchable magnetized state and disposed where the first and second write lines intersect with each other. The first write line is configured to apply a first magnetic field to the memory element when a first write current is applied, and the second write line is configured to apply a second magnetic field to the memory element when a second write current is applied. The first and second magnetic fields respectively have an orientation of less than 45 degrees with respect to a magnetization easy axis of the memory element, and are characterized in that the combination of the first and second magnetic fields has a magnitude that is large enough to switch the magnetized state of the memory element when applied to the memory element in a predetermined process. COPYRIGHT: (C)2009,JPO&INPIT